? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25c to 150c 300 v v dgr t j = 25c to 150c, r gs = 1m 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25c 88 a i l(rms) external lead current limit 75 a i dm t c = 25c, pulse width limited by t jm 220 a i a t c = 25c 60 a e as t c = 25c 2 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25c 600 w t j -55 to +150 c t jm +150 c t stg -55 to +150 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247&to-264) 1.13/10 nm/lb.in. weight to-268 4 g to-247 6 g to-264 10 g n-channel enhancement mode avalanche rated fast intrinsic diode polar tm hiperfet tm power mosfet ixft88n30p IXFH88N30P ixfk88n30p ds99216f(11/09) v dss = 300v i d25 = 88a r ds(on) 40m t rr 200ns features z international standard packages z fast intrinsic diode z avalanche rated z low r ds(on) and q g z low package inductance advantages z high power density z easy to mount z space savings applications z dc-dc coverters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac and dc motor drives z uninterrupted power supplies z high speed power switching applications symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 4ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 40 m g = gate d = drain s = source tab = drain to-268 (ixft) g s tab to-247(ixfh) g d s tab to-264 (ixfk) tab s g d www..net
ixys reserves the right to change limits, test conditions, and dimensions. ixft88n30p IXFH88N30P ixfk88n30p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 40 60 s c iss 6300 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 950 pf c rss 190 pf t d(on) 25 ns t r 24 ns t d(off) 96 ns t f 25 ns q g(on) 180 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 44 nc q gd 90 nc r thjc 0.21 c/w r thcs to-247 0.21 c/w to-264 0.15 c/w note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 60a r g = 3.3 (external) to-268 (ixft) outline source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 88 a i sm repetitive, pulse width limited by t jm 220 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 100 200 ns q rm 0 .6 c i f = 25a, -di/dt = 100a/ s, v r = 100v, v gs = 0v terminals: 1 - gate 2 - drain 3 - source tab - drain to-247 (ixfh) outline e ? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-264 (ixfk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. www..net
? 2009 ixys corporation, all rights reserved ixft88n30p IXFH88N30P ixfk88n30p fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds - volts i d - amperes v gs = 10v 9v 8v 7 v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 02468101214161820 v ds - volts i d - amperes v gs = 10v 9v 7 v 6 v 5 v 8 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v ds - volts i d - amperes v gs = 10v 9v 8v 5 v 7v 6v fig. 4. r ds(on) normalized to i d = 44a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 88a i d = 44a fig. 5. r ds(on) normalized to i d = 44a value vs. drain current 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit www..net
ixys reserves the right to change limits, test conditions, and dimensions. ixft88n30p IXFH88N30P ixfk88n30p fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 0.30.40.50.60.70.80.91.01.11.21.31.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 0 20406080100120140160180200 q g - nanocoulombs v gs - volts v ds = 150v i d = 44a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc www..net
? 2009 ixys corporation, all rights reserved ixys ref: t_88n30p(8s)11-18-09-a ixft88n30p IXFH88N30P ixfk88n30p fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w www..net
|
